Semiconductor device having an insulation film with reduced water content
US6878594B2 · kind B2 · utility
3Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1998 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | May 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.