Ferroelectric or electret memory circuit
US6878980B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Nov 22, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Apr 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric or electret memory circuit, particularly a ferroelectric or electret memory circuit with improved fatigue resistance, including a ferroelectric or electret memory cell with a polymer or oligomer memory material contacting first and second electrodes, at least one of the electrodes is comprised of at least one functional material capable of physical and/or chemical bulk incorporation of atomic or molecular species contained in either the electrode or the memory material and displaying a propensity for migrating in the form of mobile charged and/or neutral particles between an electrode and a memory material, something which can be detrimental to both. A functional material with the above-mentioned properties shall serve to offset any adverse effect of a migration of this kind, leading to an improvement in the fatigue resistance of the memory cell. The memory circuit being used in a matrix-addressable memory device where the memory cells are formed in distinct portions in a global layer of a ferroelectric or electret thin-film memory material, particularly a polymer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.