Semiconductor device having element isolation structure
US6879029B2 · kind B2 · utility
4Cited by
13References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.