Triode region MOSFET current source to bias a transimpedance amplifier
US6879217B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2003 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Sep 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Transimpedance amplifiers (TIAs) are typically used within optical receiver modules to amplify weak photocurrents received from the photodetector, in the form of photodiode, or a PIN diode. Since TIAs are used to amplify weak photocurrents, noise in the resultant amplification of the weak photocurrent is typically a problem. However, TIAs must not only provide low noise amplification of weak photocurrents, but must also operate when a much higher optical power is received by the photodetector and hence a much higher photocurrent is provided to an input port of the TIA. Of course, with the higher photocurrent received from the photodetector the TIA must also exhibit acceptable bit error rate performance as with the lower photocurrents. An elevated front end TIA (EFTIA) is thus provided that offers low noise performance while providing a wide dynamic range, which overcomes the deficiencies of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.