Method of manufacturing semiconductor device
US6881631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2003 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Nov 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
A method of manufacturing a semiconductor device comprises forming a first conductive material film on a semiconductor substrate with a gate insulating film interposed therebetween, selectively forming a second conductive material film on the first conductive material film, the second conductive material film being capable of reducing the first conductive material film, causing that portion of the first conductive material film which is selectively covered with the second conductive material film to be subjected to a reducing reaction with the second conductive material film so as to change the composition of the resultant film and to form a third conductive material film differing in the work function from the first conductive material film, and forming a first gate electrode having the first conductive material film and a second gate electrode having at least the third conductive material film and differing from the first gate electrode in the work function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.