Semiconductor device and method for manufacturing semiconductor device
US6881657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2004 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Jul 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for forming a semiconductor device, the major surface of a substrate is separated into a first element region for forming a first field-effect transistor and a second element region for forming a second field-effect transistor. A silicon nitride film is formed in each of the first and second element regions. Thereafter, the silicon nitride film formed in the second element region is removed, and the substrate is subjected to heat treatment in an ambient that contains nitrogen oxide. Thereby, the silicon nitride film in the first element region is oxidized to form an oxynitride film, and a silicon oxynitride film is formed in the second element region. Thereafter, a high-dielectric-constant film is formed on the silicon oxynitride films in each of the first and second element regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.