Method of forming silicon nitride deposited film
US6881684B2 · kind B2 · utility
12Cited by
12References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 29, 2003 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Sep 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.