Light emitting device based on indirect-bandgap materials
US6881977B1 · kind B1 · utility
Inventor
Key dates
| Filing date | Aug 23, 2000 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Oct 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
Abstract
This invention regards to novel light emitting device based on indirect bandgap materials. This device makes efficient electroluminescence possible in indirect-bandgap materials. With the quantum mechanically tunneling effect and carrier confinement, and/or small-scale roughness (in nano-meter range), and/or special (TO) phonon-assisted processes, the additional momentum required for radiative recombination of electrons and holes in indirect-bandgap materials could be provided to enhance luminescence at bandgap energy. Also, the tunneled carriers in the upper bands of large energy could directly transit to the bottom of bands by emitting photons at corresponding energy different from bandgap energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.