Efficient light emitting diodes and lasers
US6881983B2 · kind B2 · utility
9Cited by
72References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Aug 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.