Semiconductor device with analog capacitor and method of fabricating the same
US6881999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2003 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Mar 20, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having an analog capacitor and a method of fabricating the same are disclosed. The semiconductor device includes a bottom plate electrode disposed at a predetermined region of a semiconductor substrate, and an upper plate electrode having a region overlapped with the bottom plate electrode thereon. The upper plate electrode and the bottom plate electrode are formed of a metal compound. A capacitor dielectric layer is interposed between the bottom plate electrode and the upper plate electrode. A bottom electrode plug and an upper electrode plug are connected to the bottom plate electrode and the upper plate electrode through the interlayer dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.