Cold cathode electron source
US6882098B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Aug 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30469
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500˜800 degrees Celsius (° C.).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.