Thin film capacitor and method of manufacturing the same
US6882516B2 · kind B2 · utility
11Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2003 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | May 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention comprises the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.