Patent · US Expired

Method of manufacturing TFT array

US6884569B2 · kind B2 · utility

7Cited by
3References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 3, 2002
Grant dateApr 26, 2005
Priority date
Expiry dateJan 27, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/50
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In the halftone region of a photomask, uniformity in thickness of the photoresist is enhanced. The halftone region of the photomask is arranged such that a transmitting portion and a shielding portion are alternately provided to form a transmitting/shielding pattern. The transmitting portion at the end of the transmitting/shielding pattern has a larger area than the other transmitting portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.