Process and unit for production of polycrystalline silicon film
US6884699B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 6, 2000 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Feb 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/969
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.