Method of manufacturing device, device, and electronic apparatus
US6884700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Jun 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.