Method for handling a thin silicon wafer
US6884726B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 13, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | May 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68318
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for handling a thin silicon wafer including the steps of successively forming on a surface of the wafer a first protection layer, a first etch stop layer, and an external layer; forming on a surface of a support wafer a gluing layer of the same material as the external layer of the wafer, the surface of the support wafer including a plurality of pads, the respective upper portions of which are substantially planar and coplanar; fastening, by direct gluing, the external layer of the wafer and the gluing layer of the support wafer; processing the wafer to form circuits therein; depositing a second protection layer on the wafer surface which is not glued to the support wafer; and removing by an etch process the material forming the external layer of the wafer and the gluing layer of the support wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.