Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members
US6884742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Jan 18, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9607
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aluminum nitride ceramic is provided, containing boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and having a volume resistivity at room temperature of not higher than 1×1012 Ω·cm. The aluminum ceramic comprises aluminum nitride and an intergranular phase mainly consisting of boron nitride constituting a conductive path. Such a ceramic may be obtained by holding a mixture containing at least aluminum nitride and boron carbide at a holding temperature in a range of 1400° C. to 1800° C. and then sintering the mixture at a maximum temperature that is higher than the holding temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.