Solid-state image sensing device having pixels with barrier layer underneath transistor regions and camera using said device
US6885047B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Aug 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.