System and method for measuring transistor leakage current with a ring oscillator with backbias controls
US6885210B1 · kind B1 · utility
72Cited by
8References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Sep 26, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2884
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A circuit and method thereof for measuring leakage current are described. The circuit includes a pre-charge device subject to a first backbias voltage and a leakage test device subject to a second backbias voltage. The leakage test device is coupled to the pre-charge device. The leakage test device is biased to an off state. A differential amplifier is coupled to the pre-charge device and the leakage test device. A delay unit is coupled to the differential amplifier and to an input of the pre-charge device. The pre-charge device is turned on and off at a frequency that corresponds to said leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.