Plasma chemical vapor deposition apparatus
US6886491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Jun 23, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/515
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.