Method of forming flash memory with protruded floating gate
US6887756B2 · kind B2 · utility
0Cited by
2References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 3, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Jan 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method of forming a flash memory with a protruded floating gate. A substrate is provided. An isolation area and a plurality of patterned conductive layers are sequentially formed on the substrate. The isolation area protrudes from the upper surface of the substrate to isolate the patterned conductive layers. A photo resist layer is formed on the patterned conductive layer. The present invention also provides a flash memory with a protruded floating gate comprised a substrate, a plurality of protruded floating gates, an insulator, and a control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.