Method for manufacturing semiconductor device
US6887767B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2003 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0≦x≦(d/2 sin θ), where x represents the distance, and θ represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.