Patent · US Expired

Radiation sensor with photo-thermal gain

US6888141B2 · kind B2 · utility

44Cited by
8References
21Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 2, 2002
Grant dateMay 3, 2005
Priority date
Expiry dateSep 13, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/407
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A thermal sensor for low level radiation with built-in photo-thermal gain utilizing a thin film of pyro-optical material to modulate the reflectivity and/or transmission of a photonic carrier beam. The photonic carrier beam is modulated by the temperature of the pyro-optical film and detected by typically a silicon detector. A slight temperature increase of the pyro-optical film due to absorption of low level radiation increases the coefficient of absorption of the photonic carrier beam which in turn causes a further increase in temperature of the pyro-optical film. The photonic carrier beam provides power to increase the temperature of the pyro-optical film beyond the heating caused by the absorption of low level radiation alone. This thermal amplification effect provides a radiation sensor with photo-thermal gain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.