Patent · US Expired

Method for defect and conductivity engineering of a conducting nanoscaled structure

US6888150B2 · kind B2 · utility

1Cited by

6References

21Claims

0Family size

Assignee

Sony International (Europe) GmbH · DE

Inventors

Oliver Harnack · Stuttgart, DE
Jurina Wessels · Stuttgart, DE
William Ford · Stuttgart, DE
Akio Yasuda · Eßlingen, DE

Key dates

Filing date	Dec 11, 2002
Grant date	May 3, 2005
Priority date	—
Expiry date	Dec 11, 2022

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y30/00
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The invention relates to a method for defect and conductivity engineering of an individual part in a conducting nanoscaled structure by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focussed electron beam on this individual part of the structure to be engineered. The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.