Light emitting diode

US6888171B2 · kind B2 · utility

Assignee

• Dallan Luming Science & Technology Group Co., Ltd. · CN

Inventors

• Heng Liu · Los Angeles, US
• Changhua Chen · San Jose, US

Key dates

• Filing date: Dec 22, 2000
• Grant date: May 3, 2005
• Expiry date: Dec 22, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A semi-conductor light emitting diode includes closely spaced n and p electrodes formed on the same side of a substrate to form an LED with a small foot-print. A semi-transparent U shaped p contact layer is formed along three sides of the top surface of the underlying window layer. The p electrode is formed on the p contact layer centered on the closed end of the U shaped layer. An n contact layer is formed on an n cladding layer and centered in the open end of the U of the p contact layer. The n electrode is formed on the n contact layer. The n and p electrodes are electrically isolated from one another by either a trench or an insulator, situated between the electrodes.