Semiconductor device and fabrication process therefor
US6888191B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2001 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Sep 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A semiconductor device comprises: a semiconductor substrate of a first conductivity type; a first electrode provided on the semiconductor substrate with the intervention of a gate insulation film; a second electrode provided at least on the first electrode with the intervention of an intermediate insulation film; and a pair of impurity regions of a second conductivity type provided in a spaced relation in the semiconductor substrate, at least one of the impurity regions comprising a low concentration impurity region, an intermediate concentration impurity region and a high concentration impurity region sequentially arranged in this order from a region located underneath the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.