Integrated structure with microwave components
US6888219B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Mar 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A semiconductor device has a silicon layer and a first dielectric layer. A transistor has a drain and a source that are at least partially in the silicon layer. The transistor further has a gate and a spacer defining the gate. The first dielectric layer forms the spacer. A capacitor has first and second electrodes, the first electrode is formed at least partially in the silicon layer, and the first dielectric layer provides a dielectric for the capacitor between the first and second electrodes. A resistor has a resistive region formed at least partially in the silicon layer and has first and second resistor contact areas defined by the first dielectric layer. A second dielectric layer electrically isolates the transistor, the capacitor, and the resistor from conductive lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.