Externally programmable antifuse
US6888398B2 · kind B2 · utility
3Cited by
32References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Jun 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An antifuse circuit includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serving as another electrode of the capacitor. The antifuse is programmed by externally provided radiation that can rupture the gate oxide so that the gate and well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.