Semiconductor laser and method for manufacturing the same
US6888870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | May 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.