Preparation of largely HBr-free HCI gas and largely HBr-free aqueous HCI solution

US6890508B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Dieter Schlafer · Ludwigshafen, DE
• Josef Guth · Freinsheim, DE
• Hans-Ulrich Schlimper · Speyer, DE

Key dates

• Filing date: Dec 4, 2002
• Grant date: May 10, 2005
• Expiry date: Apr 15, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01B7/0731
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The present invention relates to a process for preparing largely HBr-free HCl gas and largely HBr-free aqueous HCl solution, which comprises the following steps: The process of the present invention allows high-purity aqueous HCl solution for use in the semiconductor industry to be prepared inexpensively and on an industrial scale. However, the purified HCl gas obtained by means of steps a) to c) can also be used for any other purposes. The invention likewise provides an apparatus for carrying out the process of the present invention.