Method and apparatus for determining two dimensional doping profiles with SIMS
US6890772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.