Transparent layer of a LED device and the method for growing the same
US6890781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Oct 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.