Method for forming a thin film transistor of an organic light emitting display
US6890803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2003 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Aug 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A method for forming a thin film transistor of an organic light emitting display includes depositing a first metal layer on a substrate, performing a photo-etching-process (PEP) to form a gate of the TFT on the substrate, forming a gate insulating layer, a microcrystalline silicon layer, an amorphous silicon layer, and a doped n+ layer sequentially, and then performing a second PEP to remove a portion of the doped n+ layer, the amorphous silicon layer, and the microcrystalline silicon layer. The method further includes forming a second metal layer, performing a third PEP to form a source and a drain on the substrate and to simultaneously remove a portion of the doped n+ layer to expose the amorphous silicon layer, and finally, forming a passivation layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.