Method of fabricating semiconductor device
US6890831B2 · kind B2 · utility
0Cited by
9References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 2, 2003 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jun 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device capable of improving reliability of a gate insulator film is obtained. This method of fabricating a semiconductor device comprises a step of forming a gate insulator film on the main surface of a semiconductor layer by heat treatment, and the step of forming the gate insulator film includes a step of performing the heat treatment in an atmosphere containing oxidizing gas at a temperature exceeding the temperature causing viscous flow of the gate insulator film thereby forming the gate insulator film on the main surface of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.