MRAM field-inducing layer configuration
US6891193B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Aug 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
A magnetic random access memory (MRAM) device is provided which includes a conductive line configured to induce a magnetic field with a higher magnitude along at least a portion of a magnetic cell junction than along a spacing arranged adjacent to the magnetic cell junction. In some embodiments, the conductive line may include first portions aligned with a plurality of magnetic cell junctions and second portions aligned with spacings arranged between the plurality of magnetic cell junctions. In such an embodiment, the first portions preferably include different peripheral profiles than the second portions. A method for fabricating such an MRAM device is also provided herein. The method may include aligning magnetic cell junctions and first portions of a field-inducing line with each other such that at least part of the first portions of the field-inducing line are configured to conduct a higher density of current than second portions of the field-inducing line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.