Semiconductor device
US6891224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2003 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jun 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A semiconductor device includes: a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a well layer of a second conductivity type formed on the barrier layer; a trench formed from the surface of the well layer to such a depth as to reach a region in the vicinity of a junction surface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of the second conductivity type selectively formed in a surface portion of the well layer, a source layer of the first conductivity type selectively formed in the surface portion of the well layer so as to contact a side wall of the gate insulating film in the trench and the contact layer, and a first main electrode formed so as to contact the contact layer and the source layer, wherein assuming that a total sum of impurity densities in the region of the barrier layer between the trenches is Qn, the Qn has a relation of the following equation: Qn≧2×1012 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.