Semiconductor device and method of manufacturing the same
US6891238B2 · kind B2 · utility
3Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Oct 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentration in a vicinity of an interface of the gate insulator film with the gate electrode is at least 1×107 cm−3, and a deuterium concentration in a vicinity of an interface of the gate insulator film with the silicon substrate is higher than the deuterium concentration in the vicinity of the interface of the gate insulation film with the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.