Semiconductor device and method of producing the same
US6891262B2 · kind B2 · utility
28Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Apr 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.