Method and apparatus for measuring dopant profile of a semiconductor
US6893884B2 · kind B2 · utility
7Cited by
2References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 28, 2002 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Apr 15, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for measuring dopant profile of a semiconductor is disclosed. Initially, the temperature of a tip of a probe and the temperature of a semiconductor sample are ascertained. Then, a voltage at a location on a surface of the semiconductor sample is obtained via the tip of the probe. The dopant concentration at the location of the surface of the semiconductor sample is subsequently determined by combining the obtained voltage and the temperature difference between the probe tip and the semiconductor sample. The above-mentioned steps can be repeated in order to generate a dopant profile of the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.