Porous gas sensors and method of preparation thereof
US6893892B2 · kind B2 · utility
4Cited by
16References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2003 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Aug 1, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/127
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.