Semiconductor device and manufacturing method therefor
US6893980B1 · kind B1 · utility
4Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2000 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Jul 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.