Microelectrode, microelectrode array and method for manufacturing the microelectrode
US6896780B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2001 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Mar 23, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/00873
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a microelectrode, a microelectrode array, and a method of manufacturing the microelectrode of which temperature can be controlled. The microelectrode comprises a sealed cavity formed in a silicon substrate for thermal isolation, a microheater formed on the sealed cavity, and an electrode heated indirectly by the microheater. According to the present invention, it is possible to manufacture with CMOS process the microelectrode and the microelectrode array which have excellent electric insulation and thermal isolation between a microheater and a silicon substrate, which has a small power consumption, which has high heating and cooling speed and which has no corrosion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.