Image sensor and method for fabricating the same
US6897086B2 · kind B2 · utility
1Cited by
16References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2003 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Oct 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.