GaN light emitting diode with conductive outer layer
US6897494B1 · kind B1 · utility
3Cited by
17References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 26, 2000 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Jul 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A GaN based LED comprises: a three layer buffer which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure; and complementary N and P electrode structures which spread current flowing between the electrodes fully across the light emitting structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.