Magnetic tunneling junction configuration and a method for making the same
US6897532B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2002 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Apr 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming a magnetic tunneling junction (MJT) is provided. In some embodiments, the method may include patterning one or more magnetic layers to form an upper portion of a MTJ. The method may further include patterning one or more additional layers to form a lower portion of the MTJ. In some cases, the lower portion may include a tunneling layer of the MTJ having a width greater than the upper portion. In addition, in some embodiments the method may further include patterning an electrode below the lower portion. In some cases, the electrode may include a lowermost layer with a thickness equal to or less than approximately 100 angstroms. In addition or alternatively, the electrode may have a width greater than the width of the tunneling layer. In yet other embodiments, the method may include forming spacers along the sidewalls of the upper and/or lower portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.