Method for driving a high side P-CHANNEL MOSFET
US6897706B2 · kind B2 · utility
6Cited by
4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 13, 2003 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Feb 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/6872
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A P-CHANNEL MOSFET is configured as a high side switch by arranging a capacitor between the P-CHANNEL MOSFET gate and a pair of push/pull transistors in a control circuit. A pull-up resistor is connected with the high side supply, one leg of the capacitor and with the gate of the P-CHANNEL MOSFET. In a two-phase electrical drive circuit, a pair of P-CHANNEL MOSFETS is connected with the high side supply and a pair of N-CHANNEL MOSFETS is connected with the low side supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.