Chemical mechanical polishing of dual orientation polycrystalline materials
US6899596B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2002 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Jul 27, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/044
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.