Semiconductor device and method of manufacturing the same
US6900460B2 · kind B2 · utility
12Cited by
6References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2001 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Nov 14, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides the structure and manufacturing method of a semiconductor device that consumes small power even when a screen is made to be larger. A signal wiring line or a part of a gate wiring line is formed from a low resistant material (typically aluminum) and p-channel TFTs are used for a pixel TFT of a pixel portion. The p-channel TFT in the pixel portion has a multi-gate structure in which a plurality of channel formation regions are provided in order to reduce fluctuation in OFF current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.