Semiconductor light emitting device having a silver p-contact

US6900472B2 · kind B2 · utility

Assignee

• Lumileds Lighting US, LLC · US

Inventors

• You Kondoh · Yamato, JP
• Satoshi Watanabe · Itoigawa, JP
• Yawara Kaneko · Chigasaki, JP
• Shigeru Nakagawa · Tokyo, JP
• Norihide Yamada · Kokubunji, JP

Key dates

• Filing date: Jan 16, 2001
• Grant date: May 31, 2005
• Expiry date: Jan 16, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/4847

Abstract

A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. A bonding layer is formed overlying the silver layer to make an electrical connection to the silver layer. The silver layer may be thin and transparent or thicker (greater than 20 nm) and reflective.