Self-repair method via ECC for nonvolatile memory devices, and relative nonvolatile memory device
US6901011B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/1068
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The method for using a nonvolatile memory (1) having a plurality of cells (14), each of which stores a datum, is based upon the steps of performing an modification operation of erasing/programming (22) the data of the memory; verifying (23) the correctness of the data of the memory cells; and, if the step of verifying (23) has revealed at least one incorrect datum, correcting on-th-field (46) the incorrect datum, using an error correcting code. The verification (23) of the correctness of the data is performed by determining (23) the number of memory cells storing an incorrect datum; if the number of memory cells storing the incorrect datum is less than or equal to a threshold (46), the erroneous datum is corrected by the error correction code; otherwise, new erasing/programming pulses are supplied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.